參數(shù)資料
型號(hào): MBRF10200CT
廠商: LITE-ON ELECTRONICS INC
元件分類: 整流器
英文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 75K
代理商: MBRF10200CT
R0JC
MBRF10150CT thru 10200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 to 200 Volts
FORWARD CURRENT - 10 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
120
Typical Thermal Resistance (Note 2)
5.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
8
2
uA
mA
TC =135 C
MBRF10150CT
150
105
150
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
VF
V
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=10A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
0.92
0.75
1.00
0.85
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Typical Junction Capacitance
per element (Note 3)
CJ
120
pF
REV. 1, Aug-2007, KTHC38
MBRF10200CT
200
140
200
TJ,
TSTG
Operating Junction and Storage
Temperature Range
-65 to +175
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
PIN 1
PIN 3
PIN 2
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
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