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參數(shù)資料
| 型號： | MBRF1060CT |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBRF1060CT |
MBRF1060CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 60 Volts
FORWARD CURRENT - 10 Amperes
10
125
MBRF1060CT
60
42
60
10000
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
TJ
Operating Temperature Range
C
TSTG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R0JC
C/W
CJ
Typical Junction Capacitance,
per element (Note 2)
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage, (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
TJ =125 C
@IF=5A
@IF=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at TC=120 C (See Fig.1)
-55 to +150
-55 to +175
4.0
220
0.1
15
0.65
0.80
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
V/us
SEMICONDUCTOR
LITE-ON
REV. 2, Aug-2007, KTHC50
ITO-220AB
PIN 1
PIN 3
PIN 2
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
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| MBRF1060CT | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBRF16200CT | 20 A, SILICON, RECTIFIER DIODE, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF1060CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 10A 3-Pin(3+Tab) ITO-220AB Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 10A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF1060CT_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF1060CT-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBRF1060CTL | 功能描述:DIODE ARRAY SCHOTTKY 60V ITO220 制造商:smc diode solutions 系列:- 包裝:管件 零件狀態(tài):有效 二極管配置:1 對共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:60V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時的電壓 - 正向（Vf）:600mV @ 5A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:1mA @ 60V 安裝類型:通孔 封裝/外殼:TO-220-3 隔離片 供應(yīng)商器件封裝:ITO-220AB 標(biāo)準(zhǔn)包裝:50 |
| MBRF1060CTP | 功能描述:DIODE ARRAY SCHOTTKY 60V ITO220 制造商:smc diode solutions 系列:- 包裝:管件 零件狀態(tài):有效 二極管配置:1 對共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:60V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時的電壓 - 正向（Vf）:700mV @ 5A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:1mA @ 60V 安裝類型:通孔 封裝/外殼:TO-220-3 隔離片 供應(yīng)商器件封裝:ITO-220AB 標(biāo)準(zhǔn)包裝:50 |
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