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參數(shù)資料
| 型號(hào)： | MBM29PL32BM10TN-E1 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 56/72頁 |
| 文件大?。?/td> | 450K |
| 代理商： | MBM29PL32BM10TN-E1 |
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Retired Product
DS05-20907-4E_July 31, 2007
MBM29PL32TM/BM90/10
6
■ FEATURES
0.23
μm Process Technology
Single 3.0 V read, program and erase
Minimizes system level power requirements
Industry-standard pinouts
48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)
48-ball FBGA(Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance Page mode
Fast 8 bytes / 4 words access capability
Sector erase architecture
Eight 8K byte and sixty-three 64K byte sectors
Eight 4K word and sixty-three 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
HiddenROM
256 bytes / 128 words of HiddenROM, accessible through a “HiddenROM Entry” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unpro-
tection status
At VACC, increases program performance
Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Program Suspend/Resume
Suspends the program operation to allow a read in another address
Low VCC write inhibit
≤ 2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector Group Protection
Hardware method disables any combination of sector groups from program or erase operations
Sector Group Protection Set function by Extended sector protect command
Fast Programming Function by Extended Command
Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
In accordance with CFI (Common Flash Memory Interface)
* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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