參數(shù)資料
型號(hào)： MBM29PL32BM10TN-E1
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁數(shù)： 45/72頁
文件大?。?/td> 450K
代理商： MBM29PL32BM10TN-E1
Retired Product
DS05-20907-4E_July 31, 2007
MBM29PL32TM/BM90/10
5
(Continued)
The standard MBM29PL32TM/BM offers access times of 90 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable
(WE), and output enable (OE) controls.
The MBM29PL32TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS stan-
dard. Commands are written into the command register. The register contents serve as input to an internal state-
machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and
data needed for the programming and erase operations. Reading data out of the devices is similar to reading
from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29PL32TM/BM is programmed by executing the program command sequence. This will invoke the
Embedded Program AlgorithmTM which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will
invoke the Embedded Erase AlgorithmTM which is an internal algorithm that automatically preprograms the array
if it is not already programmed before executing the erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell margin.
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices
internally return to the read mode.
Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simulta-
neously via hot-hole assisted erase. The words are programmed one word at a time using the EPROM program-
ming mechanism of hot electron injection.
相關(guān)PDF資料
PDF描述
MBM29PL32TM90TN-E1 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
MBN400GR12A 400 A, 1200 V, N-CHANNEL IGBT
MBNC7-J-P-GN-ST-TH1 BOARD TERMINATED, FEMALE, BNC CONNECTOR, SOLDER, JACK
MBNC7-J-P-HN-ST-TH1 BOARD TERMINATED, FEMALE, BNC CONNECTOR, SOLDER, JACK
MBNC7-J-P-MN-ST-TH1 BOARD TERMINATED, FEMALE, BNC CONNECTOR, SOLDER, JACK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM30000 功能描述:BRACKET SIDE MOUNT RoHS:是 類別:工業(yè)控制，儀表 >> 配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:Aero-Motive® 130117 附件類型:拖車帶 適用于相關(guān)產(chǎn)品:標(biāo)準(zhǔn)盒式跟蹤系統(tǒng) 其它名稱:WM6183
MBM30035001 制造商:LG Corporation 功能描述:Card,Technical
MBM30035015 制造商:LG Corporation 功能描述:Card,Technical
MBM300A6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
MBM300GR12A 制造商:n/a 功能描述:IGBT Module
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*