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參數(shù)資料
| 型號(hào)： | MB98A810Ax |
| 廠商： | Fujitsu Limited |
| 英文描述： | 1M Flash Eelectrically Erasable and Programmable (Flash) memory cards(1M電可擦除可編程閃速存儲(chǔ)器卡) |
| 中文描述： | 100萬(wàn)閃光Eelectrically可擦除和可編程（閃存）記憶卡（1分電可擦除可編程閃速存儲(chǔ)器卡） |
| 文件頁(yè)數(shù)： | 21/48頁(yè) |
| 文件大?。?/td> | 353K |
| 代理商： | MB98A810AX |
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MB98A808Ax-20
MB98A809Ax-20
MB98A810Ax-20
MB98A811Ax-20
21
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.)
Rating
Min
Max
Unit
Typ
1.0 *2
Sec.
Chip Erase Time *1
Chip Write Time
Write / Erase Cycle
Sec.
Cycle
2.0 *2
100,000
MAIN MEMORY WRITE / ERASE PERFORMANCE *
1
10
12.5 *3
Notes:
*
1 Excludes 00H writing prior to Erasure.
*2 T
A
= 25
°
C, V
PP
= 12 V, 100,000 Cycles.
*3 Minimum byte writing time excluding system overhead is 16
μ
s (10
μ
s program + 6
μ
s write recovery), while
maximum is 400
μ
s/byte. (16
μ
s
25 loops allowed by algorithm).
—
—
—
—
Parameter
Symbol
Max
Unit
Min
Note:
Address Set Up Time
Address Hold Time
Data Set Up Time
Data Hold Time
Write Recovery Time
Card Enable Set Up Time
t
RAS
t
RCS
t
ROES
t
RWP
t
RAH
ns
ns
ns
ns
Card Enable Hold Time
Write Pulse Width
t
RDS
t
RDH
t
RCH
t
ROEH
t
RRE
20
0
20
100
50
50
20
0
20
50
ns
ns
ns
ns
t
RRBO
t
RWEH
100
10
ns
ns
Write Enable Hold Time
*
1 This parameter is for MB98A808A3, 809A3, 810A3, and 811A3.
ATTRIBUTE MEMORY WRITE CYCLE *
1
Output Enable Set Up Time
Output Enable Hold Time
End of Write to Output Time
ns
ns
Write Cycle Time
t
RWR
ms
10
N
10000
Times
Number of Write per Byte
—
—
—
—
—
—
—
—
—
—
—
—
—
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB98A811Ax | 2M Flash Eelectrically Erasable and Programmable (Flash) memory cards(2M電可擦除可編程閃速存儲(chǔ)器卡) |
| MB98A809Ax | 512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K電可擦除可編程閃速存儲(chǔ)器卡) |
| MB98A808A | Flash Erasable and Programmable Memory Card(2M電可擦可編程閃速存儲(chǔ)器) |
| MB98A811A | Flash Erasable and Programmable Memory Card(16M電可擦可編程閃速存儲(chǔ)器) |
| MB98A809A | Flash Erasable and Programmable Memory Card(4M電可擦可編程閃速存儲(chǔ)器) |
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