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參數(shù)資料
| 型號： | MB98A810Ax |
| 廠商： | Fujitsu Limited |
| 英文描述： | 1M Flash Eelectrically Erasable and Programmable (Flash) memory cards(1M電可擦除可編程閃速存儲器卡) |
| 中文描述： | 100萬閃光Eelectrically可擦除和可編程（閃存）記憶卡（1分電可擦除可編程閃速存儲器卡） |
| 文件頁數(shù)： | 20/48頁 |
| 文件大小： | 353K |
| 代理商： | MB98A810AX |
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MB98A808Ax-20
MB98A809Ax-20
MB98A810Ax-20
MB98A811Ax-20
20
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.)
t
CP
Parameter
Symbol
Max
Unit
Min
200
Notes:
ns
Write Cycle Time
Address Set Up Time
Address Hold Time
Data Set Up Time
Data Hold Time
Write Recovery Time before Read
Card Enable Set Up Time before Write
t
WC
t
AS
t
AH
t
DS
t
DH
t
WHGL
ns
ns
ns
ns
μ
s
Card Enable Hold Time
Write Enable Pulse Width
Write Enable Pulse Width High
Duration of Write Operation
*
3
Duration of Erase Operation
*
3
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
0
100
80
30
6
40
0
100
60
10
9.5
μ
s
ns
ns
ns
ns
t
WS
t
WH
t
CPH
0
0
140
60
ns
ns
ns
ns
Card Enable Pulse Width
Card Enable Pulse Width High
Write Enable Set Up Time
Write Enable Hold Time
*
1 Read timing parameters during Write / Erase operations are the same as during read only operations.
Refer to AC characteristics for Main Memory Read Cycle.
*
2 Rise/Fall time
≤
5 ns.
*
3 The integrated stop timer terminates the Write / Erase operations, thereby eliminating the need for a maximum
specification.
MAIN MEMORY WRITE / ERASE CYCLE *
1
*
2
Read Recovery Time before Write
t
GHWL
0
μ
s
V
PP
Set Up Time to Chip Enable Low
t
GHWL
1.0
ms
μ
s
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—
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—
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—
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相關(guān)PDF資料 |
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| MB98A811Ax | 2M Flash Eelectrically Erasable and Programmable (Flash) memory cards(2M電可擦除可編程閃速存儲器卡) |
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| MB98A811A | Flash Erasable and Programmable Memory Card(16M電可擦可編程閃速存儲器) |
| MB98A809A | Flash Erasable and Programmable Memory Card(4M電可擦可編程閃速存儲器) |
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