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參數(shù)資料
| 型號(hào)： | MB98A810Ax |
| 廠商： | Fujitsu Limited |
| 英文描述： | 1M Flash Eelectrically Erasable and Programmable (Flash) memory cards(1M電可擦除可編程閃速存儲(chǔ)器卡) |
| 中文描述： | 100萬閃光Eelectrically可擦除和可編程（閃存）記憶卡（1分電可擦除可編程閃速存儲(chǔ)器卡） |
| 文件頁數(shù)： | 12/48頁 |
| 文件大小： | 353K |
| 代理商： | MB98A810AX |
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MB98A808Ax-20
MB98A809Ax-20
MB98A810Ax-20
MB98A811Ax-20
12
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Unit
Min
V
CC
T
A
V
°
C
V
CC
Supply Voltage
Ambient Temperature
Max
0
4.75
5.25
+55
V
Typ.
5.0
0
GND
Ground
—
—
—
DC CHARACTERISTICS
*
1 This value does not apply to CE1, CE2, WE and REG.
*
2 This value does not apply to BVD1, BVD2, CD1 and CD2.
*3 This value apply to V
PP1
and V
PP2
.
*
4 This value does not apply to BVD1 and BVD2.
*
5 Write / Erase are inhibited when V
PP
=V
PPL
.
Parameter
Symbol
Max
Unit
mA
mA
Min
Test Condition
I
CC1
I
CC2
I
LI
I
LO
V
CC
=V
CC
max
V
IN
=0 V or V
CC
V
CC
=V
CC
max
V
IN
=0 V or V
CC
I
OL
=3.2 mA,
V
CC
=V
CC
min
I
OH
=–2.0 mA,
V
CC
=V
CC
min
V
IH
V
IL
0.8
μ
A
Input Leakage Current
*
1
Output Leakage Current
*
2
V
CC
Standby Current
V
CC
Active Read Current
V
CC
Write Current
V
CC
Erase Current
V
PP
Read Current or *3
Standby Current
V
PP
Write Current *3
V
PP
Erase Current *3
Input Low Voltage
Input High Voltage
V
CC
=V
CC
max
CE1=CE2=V
IH
V
CC
=V
CC
max
CE1=CE2=V
IL
cyc. =200 ns, I
OUT
=0 mA
Write in progress
Erase in progress
V
PP
≤
V
CC
V
PP
=V
PPH
Write in progress
V
PP
>V
CC
V
PP
=V
PPH
Erase in progress
μ
A
mA
mA
mA
mA
V
V
I
CC3
I
SB1
I
PP1
I
PP2
I
PP3
–0.3
0.9
1.8
9
7
30
30
250
±
20
±
20
±
1.0
±
1.0
Typ
0.9
1.7
85
125
2.0
20
10
30
Value
Notes:
I
SB2
V
CC
=V
CC
max
CE1=CE2=V
CC
–0.2 V
7.0
14.0
mA
mA
250
V
PP
Leakage Current *3
I
PPS
Output Low Voltage
Output High Voltage
*
4
V
PP
during Read-Only Operation
V
PP
during Write/Erase Operation
V
OH
V
OL
V
PPH
V
PPL
V
PP
≤
V
CC
Note: *5
2.4
3.8
0
11.4
V
CC
+0.3
0.4
6.5
12.6
μ
A
mA
V
V
V
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
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