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參數(shù)資料
| 型號(hào)： | MB8504E032AA-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| 中文描述： | 4米× 32位超頁(yè)模式內(nèi)存的CMOS（4米× 32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 367K |
| 代理商： | MB8504E032AA-60 |
5
MB8504E032AA-60/-70
I
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.)
Notes:
*1.
*2.
Referenced to V
I
CC
depends on the output load conditions and cycle rate. The specific values are obtained with the
output open.
I
CC
depends on the number of address change as RAS = V
I
CC1
, I
CC3
, I
CC4
and I
CC5
are specified at one time of address change during RAS = V
I
CC2
is specified during RAS = V
IH
and V
IL
> –0.3V.
SS
.
IL
and CAS = V
IH
, V
IL
> –0.3 V.
and CAS = V
IL
IH
.
I
CAPACITANCE (T
A
= 25
°
C, f = 1 MHz, V
CC
= 5.0 V)
Parameter
Notes
Symbol
Condition
Value
Unit
Min.
2.4
—
Max.
—
0.4
Output High Voltage
Output Low Voltage
*1
*1
V
V
OH
I
I
OH
= –5.0 mA
= 4.2 mA
V
V
OL
OL
Input Leakage Current
RAS
I
I(L)
0 V
4.5 V
V
SS
not under test = 0 V
≤
V
≤
IN
V
≤
CC
V
CC
≤
5.5 V,
,
= 0 V, All other pins
30
μ
A
CAS
20
Address, WE
60
Output Leakage Current
I
O(L)
0 V
Data out disabled
≤
V
OUT
≤
5.5 V,
–10
10
μ
A
Operating Current
(Average power
supply current)
*2
MB8504E032AA-60
I
CC1
RAS & CAS cycling,
t
RC
= min
—
mA
MB8504E032AA-70
—
Standby Current
(Power supply
current)
TTL Level
I
CC2
RAS = CAS = V
RAS = CAS
IH
≥
V
CC
–0.2 V
—
mA
CMOS Level
—
Refresh Current#1
(Average power
supply current)
*2
MB8504E032AA-60
I
CC3
CAS = V
t
RC
= min
IH
, RAS = cycling,
—
mA
MB8504E032AA-70
—
Hyper Page Mode
Current
*2
MB8504E032AA-60
MB8504E032AA-70
I
CC4
RAS = V
t
HPC
= min
IL
, CAS = cycling,
—
—
720
640
mA
Refresh Current#2
(Average power
supply current)
*2
MB8504E032AA-60
I
CC5
RAS cycling,
CAS-before-RAS,
t
RC
= min
—
mA
MB8504E032AA-70
—
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance, A0 to A10
C
IN1
—
71
pF
Input Capacitance, RAS0 and RAS2
C
IN2
—
39
pF
Input Capacitance, CAS0 to CAS3
C
IN3
—
23
pF
Input Capacitance, WE
C
IN4
—
66
pF
I/O Capacitance, (DQ0-31)
C
DQ
—
12
pF
–30
–20
–60
840
720
16
8
840
720
840
720
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