參數(shù)資料
型號: MB8504E032AA-60
廠商: Fujitsu Limited
英文描述: 4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超級頁面存取模式動態(tài)RAM模塊)
中文描述: 4米× 32位超頁模式內(nèi)存的CMOS(4米× 32位超級頁面存取模式動態(tài)內(nèi)存模塊)
文件頁數(shù): 4/11頁
文件大小: 367K
代理商: MB8504E032AA-60
4
MB8504E032AA-60/-70
I
(Referenced to V
RECOMMENDED OPERATING CONDITION
)
Parameter
SS
* :Undershoots of up to –2.0 volts with a pulse width not exceeding 10 ns are acceptable
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
V
Input High Voltage, all inputs
V
IH
2.4
6.5
V
Input Low Voltage, all inputs*
V
IL
–0.3
0.8
V
°
C
Ambient Temperature
T
A
0
70
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