參數(shù)資料
型號(hào): MB814260-70
廠商: Fujitsu Limited
英文描述: CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 256K × 16位快速頁(yè)面模式的動(dòng)態(tài)隨機(jī)存儲(chǔ)器(的CMOS 256K × 16位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 13/26頁(yè)
文件大?。?/td> 517K
代理商: MB814260-70
13
MB814260-60/MB814260-70
Fig. 6 – EARLY WRITE CYCLE (OE = “H” or “L”)
DESCRIPTION
A write cycle is similar to a read cycle except WE is set to a Low state and OE is an “H” or “L” signal. A write cycle can be
implemented in either of three ways – early write, OE write (delayed write), or read-modify-write. During all write cycles, timing
parameters t
RWL
, t
CWL
, t
RAL
and t
CAL
must be satisfied. In the early write cycle shown above t
WCS
satisfied, data on the DQ pins are
latched with the falling edge of LCAS or UCAS and written into memory.
“H” or
ROW
ADD
VALID
DATA IN
COLUMN
ADD
HIGH-Z
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
WE
DQ
(Input)
A
0
to A
8
V
OH
V
OL
DQ
(Output)
t
RP
t
RC
t
RAS
t
RCD
t
CRP
t
CAS
t
CSH
t
RSH
t
ASR
t
CAH
t
AR
t
RAH
t
WCS
t
RAL
t
WCH
t
CAL
t
RAD
t
DS
t
DH
t
WCR
t
DHR
t
ASC
LCAS
or
UCAS
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