參數(shù)資料
型號(hào): MB8117400A-50
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 4米× 4位快速頁(yè)面模式的DRAM(的CMOS 4米× 4位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 14/27頁(yè)
文件大?。?/td> 304K
代理商: MB8117400A-50
14
MB8117400A-50/MB8117400A-60/MB8117400A-70
DESCRIPTION
A write cycle is similar to a read cycle except WE is set to a Low state and OE is a “H” or “L” signal. A write cycle can be implemented
in either of three ways-early write, OE write (delayed write), or read-modify-write. During all write cycles, timing parameters t
RWL
, t
CWL
and t
RAL
must be satisfied. In the early write cycle shown above t
WCS
satisfied, data on the DQ pin is latched with the falling edge of CAS
and written into memory.
“H” or “L”
DQ
(Output)
DQ
(Input)
ROW
ADD
VALID
DATA IN
COLUMN
ADD
HIGH-Z
WE
CAS
RAS
Fig.5 – EARLY WRITE CYCLE (OE=“H”or“L”)
V
IH
V
IL
A
0
to A
10
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
RC
t
RAS
t
CRP
t
RAD
t
RCD
t
CSH
t
RSH
t
CAS
t
ASC
t
RAH
t
ASR
t
CAL
t
RAL
t
CAH
t
RP
t
WCH
t
WCS
t
DS
t
DH
t
AR
t
CWL
t
WCR
t
WP
t
RWL
t
DHR
相關(guān)PDF資料
PDF描述
MB8117400A-60 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8117400A-70 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB8117400B-50 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁(yè)面存取模式RAM)
MB8117400B-60 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁(yè)面存取模式RAM)
MB8117405A-60 CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
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