參數(shù)資料
型號(hào)： MB81164442A-100L
廠商： Fujitsu Limited
英文描述： CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
中文描述： 的CMOS 4 × 4米× 16位同步動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器（SDRAM）（的CMOS 4 × 4米× 16位同步動(dòng)態(tài)RAM）的
文件頁數(shù)： 25/46頁
文件大?。?/td> 642K
代理商： MB81164442A-100L
25
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING CONDITIONS
(Referenced to V
SS
)
Notes:
*1.
Overshoot limit: V
IH
(max) = TBD.
Undershoot limit: V
IL
(min) = –1.5 V with a pulsewidth
≤
5 ns.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
*2.
I
CAPACITANCE
(T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Value
Unit
Voltage of V
CC
Supply Relative to V
SS
V
CC
, V
CCQ
–0.5 to +4.6
V
Voltage at Any Pin Relative to V
SS
V
IN
, V
OUT
–0.5 to +4.6
V
Short Circuit Output Current
I
OUT
–50 to +50
mA
Power Dissipation
P
D
1.0
W
°
C
Storage Temperature
T
STG
–55 to +125
Parameter
Notes
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
, V
CCQ
3.0
3.3
3.6
V
V
SS
, V
SSQ
0
0
0
V
Input High Voltage
*1
V
IH
2.0
—
V
CC
+ 0.5
V
Input Low Voltage
*2
V
IL
–0.5
—
0.8
V
Ambient Temperature
T
A
0
—
70
°
C
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance, Address
C
IN1
—
5
pF
Input Capacitance, Except for address
C
IN2
—
5
pF
I/O Capacitance
C
I/O
—
7
pF
相關(guān)PDF資料
PDF描述
MB81164442A-100 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-125 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-125L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-67 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-67L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB8116E 制造商:FUJITSU 功能描述: 制造商:FUJITSU 功能描述:8116E
MB8117800A-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB8117800A-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB812 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB812.833 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*