參數(shù)資料
型號: MB8116165A-60
廠商: Fujitsu Limited
英文描述: CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 100萬× 16位的超頁模式動態(tài)RAM的CMOS(100萬× 16位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 6/30頁
文件大小: 376K
代理商: MB8116165A-60
6
MB8116165A-60/MB8116165A-70
HYPER PAGE MODE OPERATION
The hyper page mode operation provides faster memory access and lower power dissipation. The hyper page
mode is implemented by keeping the same row address and strobing in successive column addresses. To satisfy
these conditions, RAS is held Low for all contiguous memory cycles in which row addresses are common. For
each page of memory (within column address locations), any of 256
×
16-bits can be accessed and, when multiple
MB8116165As are used, CAS is decoded to select the desired memory page. Hyper page mode operations need
not be addressed sequentially and combinations of read, write, and/or read-modify-write cycles are permitted. Hyper
page mode features that output remains valid when CAS is inactive until CAS is reactivated.
相關(guān)PDF資料
PDF描述
MB8116165A-70 CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動態(tài)RAM)
MB8116165B-50 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM)
MB8116165B-60 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM)
MB8116400A-50 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁面存取模式動態(tài)RAM)
MB8116400A-60 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4 位快速頁面存取模式動態(tài)RAM)
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