參數(shù)資料
型號(hào)： MB81117422A-84
廠商： Fujitsu Limited
英文描述： CMOS 2×2M ×4 Bit Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步動(dòng)態(tài)RAM)
中文描述： 的CMOS 2 × 200萬(wàn)× 4位同步動(dòng)態(tài)RAM（2 × 200萬(wàn)的CMOS × 4位同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 41/44頁(yè)
文件大小： 273K
代理商： MB81117422A-84
41
MB81117422A-125/-100/-84/-67
TIMING DIAGRAM - 15 : AUTO-REFRESH TIMING
Notes:
1. All banks should be precharged prior to the first Auto-refresh command (REF).
2. Bank select is ignored at REF command. The refresh address is selected by internal refresh counter, and
both banks are internally selected simultaneously.
3. Either NOP or DESL command should be asserted during t
period while auto-refresh mode.
4. Any Activation command such as ACTV or MRS command other than REF command should be asserted
after t
RC
from the last REF comand.
TIMING DIAGRAM - 16 : SELF-REFRESH ENTRY AND EXIT TIMING
Notes:
1. Precharge command (PRE or PALL) should be asserted if any bank is active prior to Self-refresh Entry
command (SELF).
2. The Self Refresh Exit command (SELFX) is latched after t
(min). It is recommended to apply NOP
command in conjunction with CKE. It is also recommended to apply minimum of 4 clocks to stabilize
external clock prior to SELFX command.
3. Either NOP or DESL command can be used during t
RC
period.
CLK
Command
A
11
(BA)
REF
Command
Don’t Care
Don’t Care
BA
1
NOP
NOP
REF
NOP
4
Don’t Care
3
NOP
t
RC
(min)
t
RC
(min)
CLK
CKE
Command
NOP
SELF
Don’t Care
SREX
Command
NOP2
NOP3
1
t
PDE
(min)
t
PC
(min)
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