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參數資料
| 型號： | MAT02AH |
| 廠商： | PRECISION MONOLITHICS INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise, Matched Dual Monolithic Transistor |
| 中文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數： | 4/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MAT02AH |
MAT02
WAFER TEST LIMTS
(@ 25
8
C for V
CB
= 15 V and I
C
= 10
m
A, unless otherwse noted.)
–4–
REV. C
MAT 02N
Limits
Parameter
Symbol
Conditions
Units
Average Offset
Voltage Drift
Average Offset
Current Drift
Gain-Bandwidth
Product
Offset Current Change vs. V
CB
T CV
OS
10
μ
A
≤
I
C
≤
1 mA
0
≤
V
CB
≤
V
MAX
I
C
= 10
μ
A
0.08
μ
V/
°
C
T CI
OS
40
pA/
°
C
f
T
V
CE
= 10 V, I
C
= 10 mA
200
MHz
I
OS
/
V
CB
0
≤
V
CB
≤
40 V
70
pA/V
MAT 02N
Limits
Parameter
Symbol
Conditions
Units
Breakdown Voltage
Offset Voltage
Input Offset Current
Input Bias Current
Current Gain
BV
CEO
V
OS
I
OS
I
B
h
FE
40
150
1.2
34
400
300
4
50
V min
μ
V max
nA max
nA max
min
10
μ
A
≤
I
C
≤
1 mA
1
V
CB
= 0 V
I
C
= 1 mA, V
CB
= 0 V
I
C
= 10
μ
A, V
CB
= 0 V
10
μ
A
≤
I
C
≤
1 mA, V
CB
= 0 V
0 V
≤
V
CB
≤
40 V
10
μ
A
≤
I
C
≤
1 mA
1
V
CB
= 0
10
μ
A
≤
I
C
≤
1 mA
1
100
μ
A
≤
I
C
≤
10 mA
I
C
= 1 mA
I
B
= 100
μ
A
Current Gain Match
Offset Voltage
Change vs. V
CB
Offset Voltage Change
vs. Collector Current
Bulk Resistance
Collector Saturation Voltage
h
FE
V
OS
/
V
CB
% max
μ
V max
V
OS
/
I
C
50
μ
V max
r
BE
V
CE (SAT )
0.5
0.2
max
V max
NOT ES
1
Measured at l
C
= 10
μ
A and guaranteed by design over the specified range of I
C
.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT 02 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
(V
CB
= 15 V, I
C
= 10
m
A, T
A
= +25
8
C, unless otherwse noted.)
TYPICAL ELECTRICAL CHARACTERISTICS
Die Size 0.061
×
0.057 inch, 3,477 sq. mils
(1.549
×
1.448 mm, 224 sq. mm)
1. COLLECTOR (1)
2. BASE (1)
3. EMITTER (1)
4. COLLECTOR (2)
5. BASE (2)
6. EMITTER (2)
7. SUBSTRATE
DICE CHARACT E RIST ICS
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| MAT02FH | CONN HEADER 20POS .100 STR 15AU |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MAT02AH/883C | 制造商:Rochester Electronics LLC 功能描述:LOW-NOISE DUAL- LEV.B - Bulk |
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BIEH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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