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參數(shù)資料
| 型號： | MAT02AH |
| 廠商： | PRECISION MONOLITHICS INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise, Matched Dual Monolithic Transistor |
| 中文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MAT02AH |
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
LowNoise, Matched
Dual Monolithic Transistor
MAT02
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
FEATURES
Low Offset Voltage: 50
m
V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/
√
Hz
max
High Gain (h
FE
): 500 min at I
C
= 1 mA
300 min at I
C
= 1
m
A
Excellent Log Conformance: r
BE
.
0.3
V
Low Offset Voltage Drift: 0.1
m
V/
8
C max
Improved Direct Replacement for LM194/394
Available in Die Form
ORDE RING GUIDE
1
V
OS
max
(T
A
= +25
8
C)
T emperature
Range
Package
Option
Model
MAT 02AH
2
MAT 02EH
MAT 02FH
50
μ
V
50
μ
V
150
μ
V
–55
°
C to +125
°
C
–55
°
C to +125
°
C
–55
°
C to +125
°
C
T O-78
T O-78
T O-78
NOT ES
1
Burn-in is available on commercial and industrial temperature range parts in
T O-can packages.
2
For devices processed in total compliance to MIL-ST D-883, add /883 after part
number. Consult factory for 883 data sheet.
ABSOLUT E MAX IMUM RAT INGS
1
Collector-Base Voltage (BV
CBO
) . . . . . . . . . . . . . . . . . . . .40 V
Collector-Emitter Voltage (BV
CEO
) . . . . . . . . . . . . . . . . . .40 V
Collector-Collector Voltage (BV
CC
) . . . . . . . . . . . . . . . . . .40 V
Emitter-Emitter Voltage (BV
EE
) . . . . . . . . . . . . . . . . . . . . .40 V
Collector Current (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (I
E
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
T otal Power Dissipation
Case T emperature
≤
40
°
C
2
. . . . . . . . . . . . . . . . . . . . .1.8 W
Ambient T emperature
≤
70
°
C
3
. . . . . . . . . . . . . . . .500 mW
Operating T emperature Range
MAT 02A . . . . . . . . . . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
MAT 02E, F . . . . . . . . . . . . . . . . . . . . . . . . .–25
°
C to +85
°
C
Operating Junction T emperature . . . . . . . . . .–55
°
C to +150
°
C
Storage T emperature . . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead T emperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°
C
Junction T emperature . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
NOT ES
1
Absolute maximum ratings apply to both DICE and packaged devices.
2
Rating applies to applications using heat sinking to control case temperature.
Derate linearly at 16.4 mW/
°
C for case temperature above 40
°
C.
3
Rating applies to applications not using a heat sinking; devices in free air only.
Derate linearly at 6.3 mW/
°
C for ambient temperature above 70
°
C.
NOTE
Substrate is connected to case on TO-78 package. Sub-
strate is normally connected to the most negative circuit
potential, but can be floated.
PIN CONNE CT ION
T O-78
(H Suffix)
PRODUCT DE SCRIPT ION
T he design of the MAT 02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift, and low r
BE
.
Precision Monolithics’ exclusive Silicon Nitride “T riple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (h
FE
) of the MAT 02 is maintained over a wide
range of collector current. Exceptional characteristics of the
MAT 02 include offset voltage of 50
μ
V max (A/E grades) and
150
μ
V max F grade. Device performance is specified over the
full military temperature range as well as at 25
°
C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. T he substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. T his results in complete isola-
tion between the transistors.
T he MAT 02 should be used in any application where low noise
is a priority. T he MAT 02 can be used as an input stage to make
an amplifier with noise voltage of less than 1.0 nV/
√
Hz
at 100 Hz.
Other applications, such as log/antilog circuits, may use the ex-
cellent logging conformity of the MAT 02. T ypical bulk resis-
tance is only 0.3
to 0.4
. T he MAT 02 electrical charac-
teristics approach those of an ideal transistor when operated over
a collector current range of 1
μ
A to 10 mA. For applications re-
quiring multiple devices see MAT 04 Quad Matched T ransistor
data sheet.
相關PDF資料 |
PDF描述 |
|---|---|
| MAT02EH | CONN HEADER 18POS .100 STR 15AU |
| MAT02FH | CONN HEADER 20POS .100 STR 15AU |
| MAT03 | Low Noise, Matched Dual PNP Transistor |
| MAT03AH | Low Noise, Matched Dual PNP Transistor |
| MAT03EH | Low Noise, Matched Dual PNP Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02AH/883C | 制造商:Rochester Electronics LLC 功能描述:LOW-NOISE DUAL- LEV.B - Bulk |
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BIEH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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