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參數(shù)資料
| 型號： | MAT02AH |
| 廠商： | PRECISION MONOLITHICS INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise, Matched Dual Monolithic Transistor |
| 中文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MAT02AH |
REV. C
–2–
ELECTRICAL CHARACTERISTICS
MAT 02A/E
Min
T yp
MAT 02F
Min
Parameter
Symbol
Conditions
Max
T yp
Max
Units
Current Gain
h
FE
I
C
= 1 mA
1
I
C
= 100
μ
A
I
C
= 10
μ
A
I
C
= 1
μ
A
10
μ
A
≤
I
C
≤
1 mA
2
V
CB
= 0, 1
μ
A
≤
I
C
≤
1 mA
3
0
V
CB
≤
V
MAX
,
4
1
μ
A
≤
I
C
≤
1 mA
3
V
CB
= 0 V
1
A
≤
I
C
≤
1 mA
3
500
500
400
300
605
590
550
485
0.5
10
10
10
5
5
400
400
300
200
605
590
550
485
0.5
80
10
10
5
5
Current Gain Match
Offset Voltage
Offset Voltage
Change vs. V
CB
Offset Voltage Change
vs. Collector Current
Offset Current
Change vs. V
CB
Bulk Resistance
Collector-Base
Leakage Current
Collector-Collector
Leakage Current
Collector-Emitter
Leakage Current
Noise Voltage Density
h
FE
V
OS
V
OS
/
V
CB
2
50
25
25
25
25
4
150
50
50
50
50
%
μ
V
μ
V
μ
V
μ
V
μ
V
V
OS
/
I
C
I
OS
/
V
CB
r
BE
0
≤
V
CB
≤
V
MAX
10
μ
A
≤
I
C
≤
10 mA
5
30
0.3
70
0.5
30
0.3
70
0.5
pA/V
I
CBO
V
CB
= V
MAX
25
200
25
400
pA
I
CC
V
CC
= V
MAX5, 6
V
CE
= V
MAX5, 6
V
BE
= 0
I
C
= 1 mA, V
CB
= 0
7
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
35
200
35
400
pA
I
CES
e
n
35
200
35
400
pA
1.6
0.9
0.85
0.85
2
1
1
1
1.6
0.9
0.85
0.85
3
2
2
2
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
Collector Saturation
Voltage
Input Bias Current
Input Offset Current
Breakdown Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-Collector
Capacitance
V
CE(SAT )
I
B
I
OS
BV
CEO
f
T
C
OB
I
C
= 1 mA, I
B
= 100
μ
A
I
C
= 10
μ
A
I
C
= 10
μ
A
0.05
0.1
25
0.6
0.05
0.2
34
1.3
V
nA
nA
V
MHz
pF
40
40
I
C
= 10 mA, V
CE
= 10 V
V
CB
= 15 V, I
E
= 0
200
23
200
23
C
CC
V
CC
= 0
35
35
pF
NOT ES
1
Current gain is guaranteed with Collector-Base Voltage (V
) swept from 0 to V
MAX
at the indicated collector currents.
100 (
I
B
) (h
FE
min)
I
C
2
Current gain match (
h
FE
) is defined as:
h
FE =
3
Measured at I
C
= 10
μ
A and guaranteed by design over the specified range of I
C
.
4
T his is the maximum change in V
OS
as V
CB
is swept from 0 V to 40 V.
5
Guaranteed by design.
6
I
CC
and I
CES
are verified by measurement of I
CBO
.
7
Sample tested.
Specifications subject to change without notice.
MAT02–SPECIFICATIONS
(@ V
CB
= 15 V, I
C
= 10
m
A, T
A
= 25
8
C, unless otherwse noted.)
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|---|---|
| MAT02AH/883C | 制造商:Rochester Electronics LLC 功能描述:LOW-NOISE DUAL- LEV.B - Bulk |
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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