參數(shù)資料
型號: MAPLST2122-002PP
元件分類: 小信號晶體管
英文描述: S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PFP-16
文件頁數(shù): 4/5頁
文件大小: 141K
代理商: MAPLST2122-002PP
RF Power LDMOS Transistor, 2110-2170 MHz, 2W, 28V
MAPLST2122-002PP
7/9/04
Preliminary
4
Graph 1. W-CDMA: Gain and Efficiency
versus Output Power
Graph 2. W-CDMA: ACPR versus Output
Power
Graph 3. CW: Gain and Efficiency
versus Output Power
Graph 4. Two Tone: Intermodulation
Distortion versus Output Power
28VDC, IDQ=35mA, 2.17GHz
3GPP W-CDMA,
Test Model 1 w/16DPCH
11
12
13
14
15
16
18 20 21 22 23 24 25 26 27 28
POUT (dBm Avg.)
Gain(dB)
0
5
10
15
20
25
Efficiency
(%
)
28VDC, IDQ=35mA
3GPP WCDMA,
Test Model 1 w/16DPCH
-55
-53
-51
-49
-47
-45
-43
-41
18 19 20 21 22 23 24 25 26 27 28
POUT(dBm Avg.)
ACPR(dBc)
ACPR (2.17GHz)
ACPR (2.14GHz)
ACPR (2.11GHz)
28VDC, IDQ=35mA
6
7
8
9
10
11
12
13
14
15
16
18 20 22 24 26 28 30 32 33 34 35
POUT dBm
Ga
in
(d
B
)
0
10
20
30
40
50
Efficiency
(%)
28VDC, IDQ=35mA
2-Tone, 100kHz Spacing
-65
-60
-55
-50
-45
-40
-35
-30
-25
18
20
22
24
26
28
30
32
POUT(dBm Avg.)
IMD(dB
c)
IM3 (2.17GHz)
IM3 (2.14GHz)
IM3 (2.11GHz)
IM5 (2.17GHz)
IM5 (2.14GHz)
IM5 (2.11GHz)
相關PDF資料
PDF描述
MAPLST2122-015CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-030WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-060WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-030CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-090CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MAPLST2122-015CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
MAPLST2122-030CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
MAPLST2122-060CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
MAPLST2122-090CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
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