參數資料
型號： MAPLST2122-060WF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數： 1/5頁
文件大小： 161K
代理商： MAPLST2122-060WF
MAPLST2122-030CF
RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 30W, 28V
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
30W Output Power at P1dB (CW)
12dB Minimum Gain at P1dB (CW)
W-CDMA Typical Performance:
(28VDC, -45dBc ACPR @ 4.096MHz)
Output Power: 4.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR Ruggedness (CW @ 30W,
28V, 2110MHz)
MAPLST2122-030CF
Package Style
4/6/2005
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
V
DSS
65
Vdc
Gate—Source Voltage
V
GS
20
Vdc
Total Power Dissipation @ TC = 25 °C
P
D
97
W
Storage Temperature
T
STG
-40 to +150
°C
Junction Temperature
T
J
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
1.8
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
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相關代理商/技術參數
參數描述
MAPLST2122-090CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
MAPM-020512-010C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-010C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00
MAPM-020512-040C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:40dB VSWR:3:5 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-040C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Broadband UHF/VHF Power Module
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