參數(shù)資料
型號： MAPR-001090-350S00
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁數(shù)： 1/4頁
文件大?。?/td> 147K
代理商： MAPR-001090-350S00
Avionics Pulsed Power Transistor
350W, 1025-1150 MHz, 10s Pulse, 1% Duty
MAPR-001090-350S00
M/A-COM Products
Released, 14 Sep 2007
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS Compliant
Outline Drawing
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage IC = 250mA
BVCES
65
-
V
Collector-Emitter Leakage Current
VCE = 50V
ICES
-
15
mA
Thermal Resistance
Vcc = 50V, Pout = 350W
F = 1090 MHz
RTH(JC)
-
0.16
°C/W
Input Power
Vcc = 50V, Pout = 350W
F = 1090 MHz
PIN
-
44
W
Power Gain
Vcc = 50V, Pout = 350W
F = 1090 MHz
GP
9.0
-
dB
Collector Efficiency
Vcc = 50V, Pout = 350W
F = 1090 MHz
η
C
45
-
%
Input Return Loss
Vcc = 50V, Pout = 350W
F = 1090 MHz
RL
-
-9
dB
Load Mismatch Tolerance
Vcc = 50V, Pout = 350W
F = 1090 MHz
VSWR-T
-
10:1
-
Load Mismatch Stability
Vcc = 50V, Pout = 350W
F = 1090 MHz
VSWR-S
-
1.5:1
-
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
25
A
Power Dissipation @ +25°C
PTOT
1.1
kW
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
相關(guān)PDF資料
PDF描述
MAPR-002729-170M00 S BAND, Si, NPN, RF POWER TRANSISTOR
MAPRST0912-350 L BAND, Si, NPN, RF POWER TRANSISTOR
MAPRST1030-1KS L BAND, Si, NPN, RF POWER TRANSISTOR
MAPRST1214-030UF L BAND, Si, NPN, RF POWER TRANSISTOR
MAPRST1214-150UF L BAND, Si, NPN, RF POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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