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參數(shù)資料
| 型號： | MAPR-001090-350S00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MAPR-001090-350S00 |
Avionics Pulsed Power Transistor
350W, 1025-1150 MHz, 10s Pulse, 1% Duty
MAPR-001090-350S00
M/A-COM Products
Released, 14 Sep 2007
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Typical Broadband RF Performance
(Provided for information only - 100% Production testing performed at 1090MHz only)
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(10:1)
1025
37
350
9.81
12.8
54.6
-14.8
S
P
1090
35
350
9.96
12.5
55.8
-16.7
S
P
1150
34
350
10.10
12.4
56.6
-26.1
S
P
F (MHz)
ZIF ()
ZOF ()
960
1.8 - j3.7
2.2 - j2.8
1025
1.8 - j3.2
2.3 - j2.2
1090
1.8 - j2.7
2.4 - j1.7
1150
1.9 - j2.3
2.6 - j1.5
1215
2.0 - j1.9
2.8 - j1.3
RF Test Fixture Impedance
Gain vs. Frequency
Collector Efficiency vs. Frequency
40
45
50
55
60
1.03
1.06
1.09
1.12
1.15
Freq (M Hz)
C
o
llect
o
rE
ff
ici
en
cy
(%
)
8.5
9.0
9.5
10.0
10.5
1.03
1.06
1.09
1.12
1.15
Fre q (M Hz)
G
ain
(
d
B
)
相關PDF資料 |
PDF描述 |
|---|---|
| MAPR-002729-170M00 | S BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPRST0912-350 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPRST1030-1KS | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPRST1214-030UF | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPRST1214-150UF | L BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAPR-002729-170M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-002731-115M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-1090-350S0 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MAPRST0002 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty |
| MAPRST0912-350 | 功能描述:射頻MOSFET電源晶體管 960-1215MHz 350W Gain: 9.4dB min RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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