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參數(shù)資料
| 型號(hào)： | MAPLST2122-002PP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PFP-16 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | MAPLST2122-002PP |
RF Power Field Effect Transistor
LDMOS, 2110—2170 MHz, 2W, 28V
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 27dBm @ -45dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 20% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz)
MAPLST2122-002PP
Package Style
7/9/04
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
V
DSS
65
Vdc
Gate—Source Voltage
V
GS
+15, -0.5
Vdc
Total Power Dissipation @ TC = 25 °C
P
D
6.9
W
Storage Temperature
T
STG
-65 to +150
°C
Junction Temperature
T
J
150
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
18
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
PFP-16
Features
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PDF描述 |
|---|---|
| MAPLST2122-015CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-060WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-090CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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