參數(shù)資料
型號： MAPLST2122-015CF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 1/5頁
文件大?。?/td> 237K
代理商： MAPLST2122-015CF
MAPLST2122-015CF
RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 15W, 28V
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
15W Output Power at P1dB (CW)
12dB Minimum Gain at P1dB (CW)
W-CDMA Typical Performance:
(28VDC, -45dBc ACPR, 5MHz offset,
4.096MHz BW)
Output Power: 2.2W (typ.)
Gain: 13dB (typ.)
Efficiency: 17% (typ.)
10:1 VSWR Ruggedness (CW @ 15W,
28V, 2110MHz)
MAPLST2122-015CF
Package Style
8/20/03
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
VDSS
65
Vdc
Gate—Source Voltage
VGS
20
Vdc
Total Power Dissipation @ TC = 25 °C
PD
54.7
W
Storage Temperature
TSTG
-40 to +150
°C
Junction Temperature
TJ
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
3.2
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
相關(guān)PDF資料
PDF描述
MAPLST2122-030WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-060WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-030CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-090CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPR-000912-500S00 L BAND, Si, NPN, RF POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAPLST2122-030CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
MAPLST2122-060CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
MAPLST2122-090CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
MAPM-020512-010C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-010C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00
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