參數(shù)資料
型號(hào)： MAPLST2122-015CF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 237K
代理商： MAPLST2122-015CF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA
MAPLST2122-015CF
8/20/2003
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
Gate Threshold Voltage
(Vds = 28 Vdc, Id = 1 mA)
VGS(th)
2.5
3.0
4.0
Vdc
Gate Quiescent Voltage
(Vds = 28 Vdc, Id = 250 mA)
VDS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 1 A)
VDS(on)
—
0.2
—
Vdc
Forward Transconductance
(Vgs = 10 Vdc, Id = 1 A)
Gm
—
1.0
—
S
DYNAMIC CHARACTERISTICS @ 25C
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
0.9
—
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) (2)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
12.8
—
dB
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
EFF ()
—
32
—
%
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-12
—
dB
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Gps
12
12.8
—
dB
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
EFF ()
—
32
—
%
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IRL
—
-12
-10
dB
Output VSWR Tolerance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 250 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
2
相關(guān)PDF資料
PDF描述
MAPLST2122-030WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-060WF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-030CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPLST2122-090CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPR-000912-500S00 L BAND, Si, NPN, RF POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAPLST2122-030CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
MAPLST2122-060CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
MAPLST2122-090CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
MAPM-020512-010C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-010C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00
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