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參數(shù)資料
| 型號(hào)： | MAPLST1920-090CF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 207K |
| 代理商： | MAPLST1920-090CF |
RF Power LDMOS Transistor, 1930 — 1990 MHz, 90W, 26V
MAPLST1920-090CF
10/31/03
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
10
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
Gate Threshold Voltage
(VDS = 26 Vdc, Id = 60 mA)
VGS(th)
2
—
5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, Id = 900 mA)
VDS(on)
3
—
0.4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, Id = 1 A)
VDS(on)
—
0.10
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, Id = 1 A)
Gm
—
7.0
—
S
DYNAMIC CHARACTERISTICS @ 25C
Output Capacitance (Capacitance excludes internal matching capacitors.)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
100
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Common-Source Amplifier Gain
(VDS = 26 Vdc, IDQ = 900 mA, f = 1990 MHz, POUT = 90 W)
Gp
—
14
—
dB
Drain Efficiency
(VDS = 26 Vdc, IDQ = 900 mA, f = 1990 MHz, POUT = 90 W)
EFF ()
—
40
—
%
Input Return Loss
(VDS = 26 Vdc, IDQ = 900 mA, f = 1990 MHz, POUT = 90 W)
IRL
—
-10
—
dB
Output VSWR Tolerance
(VDS = 26 Vdc, IDQ = 900 mA, f = 1990 MHz, POUT = 90 W,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
2
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|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
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