參數(shù)資料
型號: MAPLST1820-030CF
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: P-237, 2 PIN
文件頁數(shù): 4/5頁
文件大小: 181K
代理商: MAPLST1820-030CF
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
Graph 4. Intermodulation Distortion
Products vs. Output Power
Graph 3. Intermodulation Distortion
vs. Output Power
Graph 5. Power Gain versus Output
Power
Graph 1. Class AB Broadband Circuit
Performance
Graph 2. CDMA ACPR, Power Gain and
Drain Efficiency vs. Output Power
8
10
12
14
16
18
20
1.9
1.92
1.94
1.96
1.98
2
2.02
Frequency (GHz)
Gain
(dB),
E
fficiency
(%)
-70
-65
-60
-55
-50
-45
-40
ACPR
(dBc)
VDD = 26V, Iq = 350mA, POUT=(36dBm)
IS-95, 9 channels Forward
Gain
Efficiency
ACPR 885kHz
ACPR 1.98 MHz
0
5
10
15
20
25
10
15
20
25
30
35
40
P(ave) dBm
Gain
(dB),
E
fficiency
(%)
-80
-70
-60
-50
-40
-30
ACPR
(d
Bc)
Gain
Nd
ACPR 885 kHz
ACPR 1.98 MHz
Vdd = 26V, Iq = 350mA
f = 1.96 GHz
IS-95 9 Channels Forward
-60
-55
-50
-45
-40
-35
-30
-25
-20
20 22 24 26 28 30 32 34 36 38 40 42 44 46
POUT (dBm PEP)
IM3
(dBc
)
150 mA
200 mA
250 mA
300 mA
VDD = 26V, 1.96 GHz
Two tones, 100 kHz spacing
350 mA
400 mA
-80
-70
-60
-50
-40
-30
-20
24 26 28 30 32 34 36 38 40 42 44 46
P(ave) dBm
IMD
(dBc
)
VDD = 26V Iq = 300mA
f = 1.96 GHz, 100kHz tone spacing
IM3
IM5
IM7
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
20 22 24 26 28 30 32 34 36 38 40 42 44 46
POUT(dBm) PEP
Ga
in
(dB)
150 mA
250 mA
350 mA
400 mA
200 mA
300 mA
VDD = 26V, 1.96 GHz
Two tones, 100 kHz spacing
4
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相關代理商/技術參數(shù)
參數(shù)描述
MAPLST1820-060CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V
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MAPLST1900-030CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
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