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參數(shù)資料
| 型號： | MAPLST1820-030CF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | P-237, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 181K |
| 代理商： | MAPLST1820-030CF |
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
100
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 mA)
VGS(th)
2
2.6
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
—
0.32
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
—
1.6
—
S
DYNAMIC CHARACTERISTICS @ 25C
Input Capacitance (Capacitance includes internal matching capacitors)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
50
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
32
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.4
—
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
12
13
—
dB
Two-Tone Drain Efficiency
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
EFF ()
—
33
—
%
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
—
-30
—
dBc
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
12
13
—
dB
Two-Tone Drain Efficiency
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
EFF ()
—
33
—
%
Two-Tone Intermodulation Distortion
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
-30
-28
dBc
Output VSWR Tolerance
(VDD = 26 Vdc, POUT = 30 W, IDQ = 300 mA, f = 1900 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPLST1820-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V |
| MAPLST1820-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V |
| MAPLST1900-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V |
| MAPLST1900-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V |
| MAPLST2122-015CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
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