參數(shù)資料
型號(hào)： MADP-042405-130600
元件分類： PIN二極管
英文描述： SILICON, PIN DIODE
封裝： CASE ODS-1306, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 76K
代理商： MADP-042405-130600
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2
V2
MADP-042005 Series
SURMOUNT TM 5
m PIN Diodes—MADP-042305-130600,
MADP-042405-130600, MADP-042505-130600, MADP-042905-130600
Electrical Specifications @ + 25 °C
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
MADP-042305
MADP-042505
Capacitance
CT
- 10 V, 1 MHz
1
pF
0.14
0.22
0.28
0.40
Capacitance
CT
- 10 V, 1 GHz
1,3
pF
0.15
0.28
Capacitance
CT
- 40 V, 1 MHz
1
pF
0.13
0.22
0.27
0.40
Capacitance
CT
- 40 V, 1 GHz
1,3
pF
0.14
0.27
Resistance
RS
+ 20 mA, 1 GHz
2,3
1.32
0.83
Forward Voltage
VF
+ 10 mA
V
0.87
1.00
0.84
1.00
Reverse Leakage
Current
IR
| -80V |
uA
10
Input Third Order
Intercept Point
IIP3
F 1= 1000MHz
F2 = 1010MHz
Input Power = +20dBm
I bias = + 20 mA
dBm
72
76
C.W. Thermal
Resistance
RθJL
IH=0.5A, IL=10 mA
° C / W
145
115
Lifetime
TL
+10 mA / -6 mA
( 50 % - 90 % V )
nS
180
210
Units
Resistance
RS
+ 50 mA, 1 GHz
2,3
1.18
0.76
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
MADP-042405
MADP-042905
Capacitance
CT
- 10 V, 1 MHz
1
pF
0.61
0.75
0.06
0.18
Capacitance
CT
- 10 V, 1 GHz
1,3
pF
0.61
0.06
Capacitance
CT
- 40 V, 1 MHz
1
pF
0.57
0.75
0.06
0.18
Capacitance
CT
- 40 V, 1 GHz
1,3
pF
0.58
0.06
Resistance
RS
+ 20 mA, 1 GHz
2,3
0.62
3.14
Forward Voltage
VF
+ 10 mA
V
0.82
1.00
0.93
1.00
Reverse Leakage
Current
IR
| -80V |
uA
10
Input Third Order
Intercept Point
IIP3
F 1= 1000MHz
F2 = 1010MHz
Input Power = +20dBm
I bias = + 20 mA
dBm
80
65
C.W. Thermal
Resistance
RθJL
IH=0.5A, IL=10 mA
° C / W
100
185
Lifetime
TL
+10 mA / -6 mA
( 50 % - 90 % V )
nS
255
140
Units
Resistance
RS
+ 50 mA, 1 GHz
2,3
0.58
2.60
1. Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.
2. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
3. Rs and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package with Sn 60/Pb 40 Solder
4. Steady-state RθJL measured with die mounted in an ODS-1134 package with Sn 60/Pb 40 Solder.
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