參數(shù)資料
型號: MADP-042405-130600
元件分類: PIN二極管
英文描述: SILICON, PIN DIODE
封裝: CASE ODS-1306, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 76K
代理商: MADP-042405-130600
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
V2
MADP-042005 Series
SURMOUNT TM 5
m PIN Diodes—MADP-042305-130600,
MADP-042405-130600, MADP-042505-130600, MADP-042905-130600
Bottom Side Contacts are Circuit Side
Features
Surface Mount, 5 m I-Region Length Device
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
Higher Average and Peak Power Handling
Description and Applications
This device is a Silicon-Glass PIN diode chip fabricated
with M/A-COM’s patented HMIC
TM
process. This
device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed
on the top of one pedestal and connections to the
backside of the device are facilitated by making the
pedestal sidewalls electrically conductive. Selective
backside metallization is applied producing a surface
mount device. This Vertical Topology provides for
Exceptional Heat Transfer. The topside is fully
encapsulated
with
silicon
nitride
and
has
an
additional polymer layer for scratch and impact
protection.
These
protective
coatings
prevent
damage to the junction and the anode air-bridge
during handling and assembly.
These packageless devices are suitable for usage in
Moderate Incident Power ( 10 W C.W. ) and 50 W , 1
uS, 0.01 Duty Cycle, Peak Power, Series, Shunt, or
Series-Shunt
Switches.
Smaller
Parasitic
Inductance, 0.4 nH, and Excellent RC Constant,
make the devices ideal for Higher Frequency Switch
Elements compared to their Plastic Device Counterparts.
Absolute Maximum Ratings
1
@ TA = +25 °C (unless otherwise
specified)
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter
Absolute Maximum
Part
042
305
042
405
042
505
042
905
Forward
Current
250 mA
Reverse
Voltage
l -80 V l
Operating
Temperature
-55 °C to +125 °C
Storage
Temperature
-55 °C to +150 °C
Junction
Temperature
+175 °C
C.W. Inci-
dent Power
(dBm)
40
44
43
35
Mounting
Temperature
+300 °C for 10 seconds
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.040
0.042
1.025
1.075
B
0.021
0.023
0.525
0.575
C
0.004
0.008
0.102
0.203
D
0.013
0.015
0.325
0.375
E
0.011
0.013
0.275
0.325
F
0.013
0.015
0.325
0.375
G
0.019
0.021
0.475
0.525
Case Style
ODS-1306
1. Backside Metal: 0.1microns thick.
2. Shaded Areas Indicate Backside Ohmic Gold Contacts.
3. Both Devices have Same Outline Dimensions ( A to G ).
A
B
C
G
D
E
F
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