- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95877 > MADP-064908-131000 SILICON, PIN DIODE PDF資料下載
參數(shù)資料
| 型號： | MADP-064908-131000 |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ODS-1310, 6 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 95K |
| 代理商： | MADP-064908-131000 |
Surface Mount Monolithic Integrated PIN Diode Chip
Unconnected Double Tee
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MADP-064908-131000
SurmountTMPINChip V2
Features
No Wire Bonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Ultra-Low Parasitic Capacitance and Inductance
Higher RF C.W. Power Handling
Better Performance than Packaged Devices
Description and Applications
This device is a silicon glass PIN diode chip fabricated with
M/A-COM’s
patented
HMIC
process.
This
8.0m
I-region length device features six silicon pedestals
embedded in a low loss, low dispersion glass. The
diodes are formed on the top of a pedestal and
connections
to
the
backside
of
the
device
are
facilitated
by
making
the
pedestal
sidewalls
electrically conductive. Selective backside metallization is
applied
producing
a
surface
mount
device.
The
topside is fully encapsulated with silicon nitride and has
an
additional
polymer
layer
for
scratch
protection.
These
protective
coatings
prevent
damage to the junction and the anode air-bridge
during handling and assembly. The vertical silicon
diode topology provides for a highly efficient heat trans-
fer medium. These surface mount devices are suitable
for usage in higher (3W avg.) incident power switches.
Small parasitic inductance and excellent RC constant
make
these
devices
ideal
for
absorptive
SPST,
reflective SP2T switches, and attenuator circuits, where
higher P1db and power handling values are required.
Absolute Maximum Ratings
1
@ TAMB = +25°C (unless otherwise specified)
1. Operation of this device above any one of these parameters may
cause permanent damage.
Parameter
Absolute Maximum
Forward Current
250mA
Reverse Voltage
–100V
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
C.W. Incident Power
Mounting Temperature
+300°C for 10 seconds
+35dBm
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.060
0.062
1.524
1.575
B
0.036
0.038
0.914
0.965
C
0.004
0.008
0.102
0.203
D
0.011
0.012
0.279
0.305
Dim
Case Style - ODS-1310
1. Backside Metal: 0.1microns thick.
2. Shaded Areas Indicate Backside Ohmic Gold Contacts.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MADS-002200-12790T | SILICON, ZERO BARRIER SCHOTTKY, S BAND, MIXER DIODE |
| MAG2013 | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| MAG91X96 | 8 A, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-3 |
| MALM062HG | 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MALS062G | 6.2 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MADQ01 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:Power RF Amplifiers |
| MADQ02 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:Power RF Amplifiers |
| MADR-0009151-000DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Single Driver for GaAs FET Switches and Attenuators |
| MADR-007097-000100 | 制造商:M/A-COM Technology Solutions 功能描述:SPDT PIN DIODE DRIVE - Bulk 制造商:M/A-COM Technology Solutions 功能描述:BIAS DRIVER 制造商:M/A-COM Technology Solutions 功能描述:SPDT PIN DIODE DRIVER |
| MADR-007097-0001TR | 制造商:M/A-COM Technology Solutions 功能描述:BIAS DRIVER 制造商:M/A-COM Technology Solutions 功能描述:SPDT PIN DIODE DRIVER |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。