參數(shù)資料
型號: MA2S784
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: Silicon epitaxial planar type
中文描述: 0.1 A, 30 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, SSMINI2-F1, SC-79, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 43K
代理商: MA2S784
1
Schottky Barrier Diodes (SBD)
MA2S784
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I
Features
Super small SS-mini type 2-pin package
Allowing high-density mounting
Allowing to rectify under (I
F(AV)
= 100 mA) condition
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
)
Low V
F
(forward rise voltage), with high rectification efficiency
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Marking Symbol: C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
30
V
Repetitive peak reverse voltage
30
V
Peak forward current
I
FM
I
F(AV)
300
mA
Average forward current
100
mA
Non-repetitive peak forward
surge current
*
I
FSM
1
A
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
I
F
= 100 mA
V
R
= 0 V, f
= 1 MHz
15
μ
A
Forward voltage (DC)
V
F
C
t
0.55
V
Terminal capacitance
20
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
2.0
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring circuit
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1.60
±
0.05
1.20
+
0.05
0.03
0
±
0
0
±
0
0
±
0
0
+
0
0
( 0.2 )
1
2
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