參數(shù)資料
型號： M6MGT166S2BWG
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 25/30頁
文件大?。?/td> 253K
代理商： M6MGT166S2BWG
Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating
temperature
Storage temperature
V
mW
Conditions
With respect to GND
With respect to GND
With respect to GND
Ta=25
°
C
700
- 40 ~ +85
- 65 ~ +150
Ratings
-0.5
*
~ +4.6
-0.5
*
~ S-Vcc + 0.5
0 ~ S-Vcc
S-Vcc
V
I
V
O
P
d
T
a
T
stg
Symbol
Parameter
Units
I-version
* -3.0V in case of AC (Pulse width<
°
C
°
C
DC ELECTRICAL CHARACTERISTICS
( S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
* -3.0V in case of AC (Pulse widt<
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for S-Vcc=3.0V and Ta=25
°
C
Symbol
Parameter
Limits
Conditions
Units
m
A
mA
m
A
mA
V
Icc
1
Icc
2
Icc
4
V
IH
V
IL
V
OH1
V
OH2
V
OL
I
I
I
O
Icc
3
I
OH
= -0.5mA
I
OH
= -0.05mA
I
OL
=2mA
V
I
=0
~
S-Vcc
S-LB# and S-UB#=V
IH
or
S-CE1#=V
IH
or S-CE2=V
IH
or S-OE#=V
IH
, V
I/O
=0 ~ S-Vcc
(S-Vcc)+0.3V
0.6
2.0
-0.3 *
2.4
1.0
0.4
+/- 1
60
15
60
15
30
45
5
45
5
-
-
10
(S-Vcc)-0.5V
+/- 1
Max
Typ
Min
+25 ~ +40
°
C
f= 10MHz
f= 1MHz
f= 10MHz
f= 1MHz
+70 ~ +85
°
C
-
-
-
-
-
-
-
-
1
5
-
High-level input voltage
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
Low-level output voltage
Input leakage current
Output leakage current
Active supply current
( AC,MOS level )
Active supply current
( AC,TTL level )
Stand by supply current
( AC,MOS level )
( AC,TTL level )
Stand by supply current
Other inputs= 0 ~ S-Vcc
Other inputs=0~S-Vcc
S-CE2 0.2V
S-LB# and S-UB#=V
IH
or S-CE1#=V
IH
or S-CE2=V
IL
+40 ~ +70
°
C
- 40 ~ +25
°
C
-
0.3
2
pF
8
10
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=
GND,V
O
=25mVrms, f=1MHz
C
I
C
O
(S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Typ
Max
Min
Units
Input capacitance
Output capacitance
CAPACITANCE
Note: The value of common pins to SRAM is the sum of Flash Memory and SRAM.
S-LB# and S-UB#=VIL,S-CE1#=VIL,
S-CE2=VIH other inputs=VIH or VIL
Output-open(duty 100%)
S-LB# and S-UB#<
S-CE2 >
(S-Vcc)-0.2V Output-open(duty 100%)
<
<
>
25
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相關代理商/技術參數(shù)
參數(shù)描述
M6MGT166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGT32BS4WG 制造商:-- 功能描述:ELECTRONIC COMPONENT
M6MGT331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGT331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGT331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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