參數(shù)資料
型號： M6MGT166S2BWG
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 21/30頁
文件大?。?/td> 253K
代理商： M6MGT166S2BWG
Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
21
FULL STATUS CHECK PROCEDURE
SR.5 = 0
SR.4 = 0
SR.4 =1
and
SR.5 =1
SUCCESSFUL
(BLOCK ERASE, PROGRAM)
YES
YES
YES
NO
STATUS REGISTER
READ
COMMAND SEQUENCE ERROR
NO
BLOCK ERASE ERROR
NO
PROGRAM ERROR
(BLOCK)
WRITE 77H
WRITE D0H
BLOCK ADDRESS
LOCK BIT PROGRAM FLOW CHART
SR.4 = 0
LOCK BIT PROGRAM
SUCCESSFUL
YES
YES
NO
NO
START
LOCK BIT PROGRAM
FAILED
SR.7 = 1
SR.3 = 0
YES
NO
PROGRAM ERROR
(PAGE, LOCK BIT)
PAGE PROGRAM FLOW CHART
START
WRITE 41H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
n = 0
n = n+1
WRITE
ADDRESS n, DATA n
YES
SR.7 = 1
n = FFH
or
n = 7FH
NO
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
WORD PROGRAM FLOW CHART
START
WRITE 40H
FULL STATUS CHECK
IF DESIRED
WORD PROGRAM
COMPLETED
YES
WRITE
ADDRESS , DATA
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
* Word program is admitted to only BANK(I).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGT166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGT32BS4WG 制造商:-- 功能描述:ELECTRONIC COMPONENT
M6MGT331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGT331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGT331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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