參數(shù)資料
型號(hào)： M6MGT166S2BWG
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 18/30頁(yè)
文件大小： 253K
代理商： M6MGT166S2BWG
Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
18
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-WE# control)
ARRAY READ FROM BANK(II) WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
40H
DIN
SRD
DOUT
VALID
VALID
VALID
VALID
t
WC
t
AS
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO
BANK(I)
VALID
READ STATUS
REGISTER
Change Bank Address
F-A19~F-A17,
A16~A7
A6 ~A0
BAN VALID
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-CE# control)
Change Bank Address
ARRAY READ FROM BANK(II) WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
40H
DIN
SRD
DOUT
VALID
VALID
VALID
VALID
t
WC
t
AS
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO
BANK(I)
VALID
ADDRESS VALID
READ STATUS
REGISTER
A6 ~A0
BAN VALID
F-A19~F-A17,
A16~A7
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGT166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGT32BS4WG 制造商:-- 功能描述:ELECTRONIC COMPONENT
M6MGT331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGT331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGT331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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