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參數(shù)資料
| 型號： | M5M5Y5672TG-22 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM |
| 中文描述： | 18874368位（262144 - Word的72位）網(wǎng)絡(luò)的SRAM |
| 文件頁數(shù)： | 15/27頁 |
| 文件大?。?/td> | 240K |
| 代理商： | M5M5Y5672TG-22 |
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MITSUBISHI LSIs
M5M5Y5672TG – 25,22,20
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
15
MITSUBISHI
ELECTRIC
Advanced Information
M5M5Y5672TG REV.0.1
Limits
Symbol
Parameter
Condition
Min
Max
0.4
0.4
Unit
V
OHL
V
OLL
V
OHH
V
OLH
Note26. ZQ=H; High Impedance output driver setting
Note27. ZQ=L; Low Impedance output driver setting
Low Drive Output High Voltage
Low Drive Output Low Voltage
High Drive Output High Voltage
High Drive Output Low Voltage
I
OHL
= -4mA
I
OLL
= 4mA
I
OHH
= -8mA
I
OLH
= 8mA
V
DDQ
-0.4V
V
DDQ
-0.4V
V
V
V
V
(5) Operating Currents
Limits
Symbol
Parameter
Condition
Min
Max
550
500
450
140
110
100
Unit
4.0ns cycle (250MHz)
4.4ns cycle (225MHz)
I
CC1
Power Supply Current
: Operating
Device selected;
Output open
All other inputs
V
I
≤
V
IL
or V
I
≥
V
IH
E1#
≥
V
IH
or (E2 or E3 False)
Output open
All other inputs
V
I
≤
V
IL
or V
I
≥
V
IH
Device deselected; Output open CLK frequency=0Hz
All inputs V
I
≤
V
SS
+0.1V or V
I
≥
V
DDQ
-0.1V
5.0ns cycle (200MHz)
mA
4.0ns cycle (250MHz)
4.4ns cycle (225MHz)
I
CC2
Power Supply Current
:Chip Disable
and Bank Deselect
5.0ns cycle (200MHz)
mA
I
CC3
CMOS Standby Current
(CLK stopped standby mode)
20
mA
CAPACITANCE
Limits
Typ
Symbol
Parameter
Condition
Min
Max
6
8
Unit
C
I
C
O
Note28. This parameter is sampled.
THERMAL RESISTANCE
Input Capacitance
Input / Output (DQ) Capacitance
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=GND, V
O
=25mVrms, f=1MHz
pF
pF
Limits
Typ
TBD
TBD
Symbol
Parameter
Condition
Min
Max
Unit
θ
JA
θ
JC
Thermal resistance Junction Ambient
Thermal resistance Junction to Case
TBD
TBD
pF
pF
AC ELECTRICAL CHARACTERISTICS
(Ta=0~70°C, V
DD
=1.70~1.95V, unless otherwise noted)
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