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參數(shù)資料
| 型號： | M5M5Y816WG-70HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | M5M5Y816WG-70HI |
MITSUBISHI ELECTRIC
M5M5Y816WG -70HI, -85HI
2001.05.22 Ver. 0.1
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
* Typical parameter indicates the value for the center
of distribution at 2.0V, and not 100% tested.
1
DESCRIPTION
The M5M5Y816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18μm CMOS technology.
The M5M5Y816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5Y816WG is packaged in a CSP (chip scale package),
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for
a compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
FEATURES
- Single 1.65~2.3V power supply
- Small stand-by current: 0.5μA (2.0V, typ.)
- No clocks, No refresh
- Data retention supply voltage =1.3V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18μm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
PIN CONFIGURATION
A0
~ A18
DQ1 ~ DQ16
S1
S2
W
OE
BC1
BC2
Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Pin
Function
Vcc
GND
Power supply
Ground supply
(TOP VIEW)
Outline:
48F7Q
NC: No Connection
*Don't connect E3 ball to voltage level more than 0V
1
2
3
4
5
6
A
B
C
D
E
F
G
DQ3
A7
DQ1
S2
VCC
GND
DQ6
A2
S1
DQ2
DQ4
DQ5
DQ7
A1
A4
A6
A5
A17
A16
A15
A0
A3
NCor
GND*
A14
OE
BC2
DQ15
DQ13
DQ12
DQ10
BC1
DQ16
DQ14
GND
VCC
DQ11
DQ8
W
A13
A12
N.C.
DQ9
N.C.
A11
A10
A9
A8
H
Those are summarized in the part name table below.
30mA
(10MHz)
3mA
(1MHz)
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by current (
μA
)
Ratings (max.)
25°C
40°C
25°C 40°C
Active
current
Icc1
(2.3V, max)
70°C
85°C
I-version
-40 ~ +85°C
M5M5Y816WG -70HI 1.65 ~ 2.3V
70ns
* Typical
30
15
4
2
1
0.5
A18
M5M5Y816WG -85HI 1.65 ~ 2.3V
85ns
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