參數(shù)資料
型號(hào): M5M4V64S20ATP-10
廠(chǎng)商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
中文描述: 64M號(hào)(4銀行甲4194304字× 4位)同步DRAM
文件頁(yè)數(shù): 41/48頁(yè)
文件大?。?/td> 1097K
代理商: M5M4V64S20ATP-10
M5M4V64S20ATP-8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev.0.2)
Read Interrupted by Precharge @BL=4 CL=3
/CS
/RAS
/CAS
/WE
CKE
DQM
A0-9
A10
A11
BA0,1
DQ
X
X
X
0
Y
0
Q0
Q0
Q0
ACT#0
READ#0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
tRCD
Y
1
PRE#1
CLK
X
X
X
1
tRRD
Q1
Q1
ACT#1
PRE#0
Q0
DQM read latency=2
1
Y
1
Burst Read is not interrupted
by Precharge of the other bank.
0
X
X
X
1
tRCD
tRP
READ#1
ACT#1
READ#1
Burst Read is interrupted
by Precharge of the same bank.
41
Italic parameter
indicates minimum case
相關(guān)PDF資料
PDF描述
M5M4V64S20ATP-10L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S20ATP-10L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM