參數(shù)資料
型號: M5M4V64S20ATP-10
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
中文描述: 64M號(4銀行甲4194304字× 4位)同步DRAM
文件頁數(shù): 15/48頁
文件大小: 1097K
代理商: M5M4V64S20ATP-10
M5M4V64S20ATP-8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev.0.2)
Multi Bank Interleaving READ (BL=4, CL=3)
CLK
Command
A0-9
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
READ
Y
0
10
Qa0
Qa1
Qa2
Qa3
Qb0
Qb1
Qb2
ACT
Xb
Xb
10
PRE
0
00
tRCD
/CAS latency
Burst Length
A11
Xa
Xb
READ with Auto-Precharge (BL=4, CL=3)
CLK
Command
A0-9
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
1
00
Qa0
Qa1
Qa2
Qa3
ACT
Xa
Xa
00
Internal precharge start
tRCD
tRP
A11
Xa
Xa
BL
BL + tRP
READ Auto-Precharge Timing (BL=4)
CLK
Command
ACT
READ
Internal Precharge Start Timing
DQ
DQ
CL=3
CL=2
Qa1
Qa2
Qa3
Qa0
BL
Qa1
Qa2
Qa3
Qa0
15
相關(guān)PDF資料
PDF描述
M5M4V64S20ATP-10L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S20ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM