參數(shù)資料
型號(hào)： M5M29GT160BVP
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁(yè)數(shù)： 25/25頁(yè)
文件大小： 229K
代理商： M5M29GT160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
e
Z
z
Lp
A
L
H
D
D
E
c
L1
A
A
A
b
q
l2
Recommended Mount Pad
M
D
b
e
18.6
0.225
0.9
10
°
0
°
0.1
0.8
0.6
0.25
0.6
0.5
0.4
20.2
20.0
19.8
0.5
12.1
12.0
11.9
18.5
18.4
18.3
0.175
0.125
0.105
0.3
0.2
0.15
1.0
0.2
0.125
0.05
1.2
0.1
0.4
0.75
0.25
0.45
1
24
48
25
Detail G
Detail F
M
x
y
F
G
D
48P3E-C
EIAJ Package Code
TSOP I 48-P-1220-0.50
Plastic 48pin 12x20mm TSOP(I)
Cu Alloy
Lead Material
JEDEC Code
Weight(g)
z
Z1
x
y
q
Lp
A3
Dimension in Millimeters
Nom
Min
Max
Symbol
A1
A
L
L
e
H
E
D
c
b
2
A
D
1
2
l
M
2
b
PACKAGE DIMENSIONS 48P3E (48pin 12 x 20 mm TSOP(I))
25
相關(guān)PDF資料
PDF描述
M5M29GT160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GT160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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