參數(shù)資料
型號(hào): M5M29GT160BVP
廠商: Mitsubishi Electric Corporation
英文描述: 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 16,777,216位(2097,152 - Word的8位/ 1048,576字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁數(shù): 12/25頁
文件大?。?/td> 229K
代理商: M5M29GT160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
12
During power up/down, by the noise pulses on control pins, the device has possibility of accidental erasure or programming.
The device must be protected against initiation of write cycle for memory contents during power up/down.
The delay time of min.2
m
sec is always required before read operation or write operation is initiated from the time Vcc reaches Vccmin during power up/down.
By holding RP# VIL, the contents of memory is protected during Vcc power up/down.
During power up, RP# must be held VIL for min.2
m
s from the time Vcc reaches Vccmin.
During power down, RP# must be held VIL until Vcc reaches GND.
RP# doesn't have latch mode ,therefore RP# must be held VIH during read operation or erase/program operation.
Erase and Program Performance
Block Erase Time
Main Block Write Time (Page Mode)
Page Write Time
Parameter
ms
sec
ms
Unit
Typ
4
1.0
40
Max
80
1.8
600
Min
Program Suspend Latency / Erase Suspend Time
Program Suspend Latency
Erase Suspend Time
Parameter
Unit
Typ
Max
15
15
Min
m
s
m
s
Please see page 19.
Vcc Power Up / Down Timing
Symbol
Unit
Typ
2
Max
Min
t
VCS
Please see page 12.
Parameter
RP# =V
IH
set-up time from Vccmin
m
s
Read timing parameters during command write operation mode are the same as during read-only operation mode.
Typical values at Vcc=3.3V, Ta=25
°
C
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~ 85
°
C)
Write Mode
(CE# control)
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
OE# hold from CE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
CE# pulse width
CE# pulse width high
Byte enable high or low set-up time
Byte enable high or low hold time
Write enable hold time
Write enable set-up time
t
AVAV
t
AVWH
t
EHDX
t
EHGL
-
t
DVWH
t
EHAX
t
ELEH
t
EHEL
t
FL/HWH
t
WHFL/H
t
EHWH
t
WLEL
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
t
CEP
t
CEPH
t
BS
t
BH
t
WH
t
WS
80
50
0
50
0
10
30
60
30
50
80
0
0
Max
Min
Typ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
90
50
0
50
0
10
30
60
30
50
90
0
0
Max
Min
Typ
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
F-CE# high to F-RY/BY# low
Block Lock set-up to write enable high
t
QVPH
t
EHRH1
t
EHRH2
t
EHRL
t
PHHEH
t
BLS
t
BLH
t
DAP
t
DAE
t
EHRL
OE# hold to CE# Low
t
GHEL
t
GHEL
4
40
80
600
90
0
80
80
ns
ns
ns
ms
ms
ns
ns
4
40
80
600
90
0
90
90
Limits
Speed Item: -80
Vcc=2.7~3.6V
Vcc=3.3V+/-0.3V
ns
RP# high recovery to write enable low
t
PHWL
t
PS
150
ns
150
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