參數(shù)資料
型號： M5M29GT160BVP
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 10/25頁
文件大小： 229K
代理商： M5M29GT160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
10
CAPACITANCE
Symbol
Parameter
Test conditions
pF
pF
Unit
Max
8
12
Typ
Min
Limits
Ta = 25
°
C, f = 1MHz, V
in
= V
out
= 0V
Input capacitance (Address, Control Pins)
Output capacitance
C
IN
C
OUT
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is V
CC
+0.5V which, during transitions, may overshoot to V
CC
+1.5V for periods <20ns.
ABSOLUTE MAXIMUM RATINGS
Conditions
Parameter
With respect to Ground
Symbol
V
cc
V
I1
T
a
T
bs
T
stg
I
OUT
All input or output voltage
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
V
cc
voltage
1)
Unit
V
V
°
C
°
C
°
C
mA
Min
-0.2
-0.6
-40
Max
4.6
4.6
85
95
125
100
-50
-65
All currents are in RMS unless otherwise noted.
1) Typical values at Vcc=3.3V, Ta=25
C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than V
LKO.
If Vcc is less than V
LKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than V
LKO
, the alteration of memory contents
may occur.
DC ELECTRICAL CHARACTERISTICS
(Ta = -40~ 85
°
C, Vcc = 2.7V ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Max
±
1
Typ1)
Limits
Min
Test conditions
Unit
V
CC
standby current
I
LO
I
SB1
±
10
200
Output leakage current
m
A
m
A
0V
￡
V
OUT
￡
V
CC
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
I
LI
Input leakage current
m
A
0V
￡
V
IN
￡
V
CC
V
CC
deep powerdown current
I
CC3
I
CC4
I
CC5
V
CC
program current
V
CC
erase current
V
CC
suspend current
mA
mA
m
A
35
35
200
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
Output high voltage
V
V
V
OL
V
OH1
V
OH2
V
LKO
Output low voltage
V
V
V
V
I
OL
= 4.0mA
I
OH
= –2.0mA
I
OH
= –100
m
A
0.45
Vcc+0.5
V
IH
Input high voltage
2.0
0.8
V
IL
Input low voltage
– 0.5
0.85Vcc
Vcc–0.4
1.5
Low V
CC
Lock-Out voltage 2)
2.2
I
SB2
5
V
CC
= 3.6V, V
IN
=GND or V
CC
,
CE# = RP# = WP#= V
CC
±
0.3V
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, RP# = V
IL
V
CC
= 3.6V, V
IN
=GND or V
CC
, RP# =GND
±
0.3V
m
A
0.1
15
4
mA
I
CC1
V
CC
read current for Word or Byte
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = V
IL
,
RP#=OE#=V
IH
, I
OUT
= 0mA
8
2
50
I
CC2
15
mA
V
CC
Write current for Word or Byte
V
CC
= 3.6V,V
IN
=V
IL
/V
IH
, CE# =WE#= V
IL
,
RP#=OE#=V
IH
m
A
m
A
15
5
5
I
SB3
I
SB4
0.1
5MHz
1MHz
DEVICE IDENTIFIER CODE
In the word-wide mode, the upper data(D
15-8)
is "0".
Code
Manufacturer Code
Pins
Hex. Data
1CH
DQ
0
0
A
0
V
IL
DQ
1
0
DQ
2
1
DQ
3
1
DQ
4
1
DQ
5
DQ
6
0
DQ
7
0
Device Code (-T160BVP)
A0H
V
IH
0
0
1
Device Code (-B160BVP)
V
IH
1
0
0
1
1
0
0
0
0
0
0
0
A1H
0
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GT160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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