參數(shù)資料
型號(hào): M5M29GT160BVP
廠商: Mitsubishi Electric Corporation
英文描述: 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 16,777,216位(2097,152 - Word的8位/ 1048,576字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁數(shù): 15/25頁
文件大?。?/td> 229K
代理商: M5M29GT160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
15
AC WAVEFORMS FOR PAGE PROGRAM OPERATION (WE# control)
41H
DIN
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESS VALID
CE#
OE#
WE#
DATA
RY/BY#
t
AH
V
IH
V
OH
V
OL
V
IH
V
IL
00H
FFH
01H~FEH
t
AS
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAP
t
WHRL
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
FFH
7FH
01H~7EH
00H
t
a(CE)
t
a(OE)
V
IL
V
IH
V
IL
t
BLH
t
BLS
t
PS
V
IH
RP#
BANK ADDRESS VALID
The other bank
address
VALID
VALID
VALID
DOUT
t
OEH
t
GHWL
t
a(OE)
t
a(CE)
A19~A7
BYTE#=VIL
(A6~A-1)
BYTE#=VIH
(A6 ~A0)
WP#
BAN VALID
BYTE#
V
IL
t
BS
t
BH
AC WAVEFORMS FOR PAGE PROGRAM OPERATION (CE# control)
41H
DIN
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESS VALID
CE#
OE#
WE#
DATA
t
AH
V
IH
V
IL
00H
FFH
01H~FEH
t
AS
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAP
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
FFH
7FH
01H~7EH
00H
t
a(CE)
t
a(OE)
BANK ADDRESS VALID
VALID
VALID
VALID
DOUT
t
a(CE)
t
OEH
t
GHEL
t
a(OE)
The other bank
address
RY/BY#
V
OH
V
OL
t
EHRL
t
PS
V
IH
V
IL
V
IH
RP#
V
IL
WP#
t
BLH
t
BLS
A19~A7
BYTE#=VIL
(A6~A-1)
BYTE#=VIH
(A6 ~A0)
BAN VALID
V
IH
BYTE#
V
IL
t
BS
t
BH
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M5M29GT160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY