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參數(shù)資料
| 型號： | M59MR032C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 4/49頁 |
| 文件大?。?/td> | 352K |
| 代理商： | M59MR032C |
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M59MR032C, M59MR032D
4/49
Table 1. Signal Names
A16-A20
Address Inputs
ADQ0-ADQ15
Data Input/Outputs or Address
Inputs, Command Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Power-down
WP
Write Protect
K
Burst Clock
L
Latch Enable
WAIT
Wait Data in Burst Mode
BINV
Bus Invert
V
DD
Supply Voltage
V
DDQ
Supply Voltage for Input/Output
Buffers
V
PP
Optional Supply Voltage for
Fast Program & Erase
V
SS
Ground
DU
Don’t Use as Internally Connected
DESCRIPTION
The M59MR032 is a 32 Mbit non-volatile Flash
memory that may be erased electrically at block
level and programmed in-system on a Word-by-
Word basis using a 1.65V to 2.0V V
DD
supply for
the circuitry. For Program and Erase operations
the necessary high voltages are generated inter-
nally. The device supports synchronous burst read
and asynchronous page mode read from all the
blocks of the memory array; at power-up the de-
vice is configured for page mode read. In synchro-
nous burst mode, a new data is output at each
clock cycle for frequencies up to 54MHz.
The array matrix organization allows each block to
be erased and reprogrammed without affecting
other blocks. All blocks are protected against pro-
gramming and erase at Power-up. Blocks can be
unprotected to make changes in the application
and then reprotected.
Instructions for Read/Reset, Auto Select, Write
Configuration Register, Programming, Block
Erase, Bank Erase, Erase Suspend, Erase Re-
sume, Block Protect, Block Unprotect, Block Lock-
ing, CFI Query, are written to the memory through
a Command Interface (C.I.) using standard micro-
processor write timings.
The memory is offered in
LFBGA54 and μBGA46,
0.5 mm ball pitch packages and it is supplied with
all the bits erased (set to ’1’).
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Depends on range.
3.
Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(2)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–40 to 125
°C
T
STG
Storage Temperature
–55 to 155
°C
V
IO (3)
Input or Output Voltage
–0.5 to V
DDQ
+0.5
V
V
DD
, V
DDQ
Supply Voltage
–0.5 to 2.7
V
V
PP
Program Voltage
–0.5 to 13
V
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