參數(shù)資料
型號(hào): M59MR032C
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 25/49頁(yè)
文件大小: 352K
代理商: M59MR032C
25/49
M59MR032C, M59MR032D
Table 23. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
(P)h = 39h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
0052h
0049h
(P+3)h = 3Ch
0031h
Major version number, ASCII
(P+4)h = 3Dh
0030h
Minor version number, ASCII
(P+5)h = 3Eh
00F2h
Extended Query table contents for Primary Algorithm
bit 10-31
Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31 bit
field of optional features follows at the end of the bit-30 field.
Chip Erase supported
Suspend Erase supported
Suspend Program supported
Legacy Lock/Unlock supported
Queued Erase supported
Instant individual block locking supported
Protection bits supported
Page-mode read supported
Synchronous read supported
Simultaneous operation supported
bit 0
bit 1
bit 2
bit 3
bit 4
bit 5
bit 6
bit 7
bit 8
bit 9
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
0003h
(P+7)h
0000h
(P+8)h
0000h
(P+9)h = 42h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0
bit 7 to 1
Program supported after Erase Suspend (1 = Yes, 0 = No)
Reserved; undefined bits are ‘0’
(P+A)h = 43h
0003h
Block Protect Status
Defines which bits in the Block Protect Status Register section of the Query are
implemented.
bit 0
Block Protect Status Register Protect/Unprotect bit active (1 = Yes,
0 = No)
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
Reserved for future use; undefined bits are ‘0’
bit 1
bit 15 to 2
(P+B)h
0000h
(P+C)h = 45h
0018h
V
DD
Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
(P+D)h = 46h
00C0h
V
PP
Supply Optimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
(P+E)h = 47h
0000h
Reserved
相關(guān)PDF資料
PDF描述
M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M5K4164AL-12 65 536 BIT DYNAMIC RAM
M5K4164AL-15 65 536 BIT DYNAMIC RAM
M5M27C202K-12I 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202K-15I 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59MR032C100GC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032C100ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032C120GC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032CGC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory