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參數(shù)資料
| 型號： | M58MR032-ZCT |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 49/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032-ZCT |
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M58MR032C, M58MR032D
6/52
VPP Program Supply Voltage (12V). VPP is both
a control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin; if VPP is kept in a low voltage range
(0 to 2V) VPP is seen as a control input, and the
current absorption is limited to 5A (0.2A typical).
In this case with VPP = VIL we obtain an absolute
protection against program or erase; with VPP =
VPP1 these functions are enabled (see Table 26).
VPP value is only sampled during program or
erase write cycles; a change in its value after the
operation has been started does not have any ef-
fect and program or erase are carried on regularly.
If VPP is used in the 11.4V to 12.6V range (VPPH)
then the pin acts as a power supply (see Table
26). This supply voltage must remain stable as
long as program or erase are running. In read
mode the current sunk is less then 0.5mA, while
during program and erase operations the current
may increase up to 10mA.
VSS Ground. VSS is the reference for all the volt-
age measurements.
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| M58MR064C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064C100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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