參數(shù)資料
型號: M58MR032-ZCT
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 21/52頁
文件大小: 396K
代理商: M58MR032-ZCT
M58MR032C, M58MR032D
28/52
Table 22. Burst Read Information
Table 23. Security Code Area
Offset
Data
Description
Value
(P)+13h = 48h
0003h
Page-mode read capability
bits 0-7
’n’ such that 2n HEX value represents the number of read-
page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates
no read page buffer.
8 Byte
(P+14)h = 49h
0003h
Number of synchronous mode read configuration fields that follow. 00h
indicates no burst capability.
3
(P+15)h = 4Ah
0001h
Synchronous mode read capability configuration 1
bit 3-7
Reserved
bit 0-2
’n’ such that 2n+1 HEX value represents the maximum
number of continuous synchronous reads when the device is
configured for its maximum word width. A value of 07h
indicates that the device is capable of continuous linear bursts
that will output data until the internal burst counter reaches
the end of the device’s burstable address space. This field’s
3-bit value can be written directly to the read configuration
register bit 0-2 if the device is configured for its maximum
word width. See offset 28h for word width to determine the
burst data output width.
4
(P+16)h = 4Bh
0002h
Synchronous mode read capability configuration 2
8
(P+17)h = 4Ch
0007h
Synchronous mode read capability configuration 3
Cont.
(P+18)h = 4Dh
0028h
Max operating clock frequency (MHz)
40 MHz
(P+19)h = 4Eh
0001h
Supported handshaking signal (WAIT pin)
bit 0
during synchronous read
(1 = Yes, 0 = No)
bit 1
during asynchronous read
(1 = Yes, 0 = No)
Yes
No
Offset
Data
Description
80h
0000-0000-0000-0XX0
Lock Protection Register
81h
XXXX
64 bits: unique device number
82h
XXXX
83h
XXXX
84h
XXXX
85h
XXXX
64 bits: User Programmable OTP
86h
XXXX
87h
XXXX
88h
XXXX
相關(guān)PDF資料
PDF描述
M58MR064CZC 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064C 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064D 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59DR032A 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N1T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58MR064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064C100ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064CZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory