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參數(shù)資料
| 型號(hào)： | M58MR032-ZCT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 16/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032-ZCT |
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M58MR032C, M58MR032D
POWER CONSUMPTION
Power-down
The memory provides Reset/Power-down control
input RP. The Power-down function can be acti-
vated only if the relevant Read Configuration Reg-
ister bit is set to ’1’. In this case, when the RP
signal is pulled at VSS the supply current drops to
typically ICC2 (see Table 26), the memory is dese-
lected and the outputs are in high impedance. If
RP is pulled to VSS during a Program or Erase op-
eration, this operation is aborted and the memory
content is no longer valid (see Reset/Power-down
input description).
Power-up
The memory Command Interface is reset on Pow-
er-up to Read Array. Either E or W must be tied to
VIH during Power-up to allow maximum security
and the possibility to write a command on the first
rising edge of W. At Power-up the device is config-
ured as:
– Page mode: (CR15 = 1)
– Power-down disabled: (CR10 = 0)
– BINV disabled: (CR14 = 0).
All blocks are protected and unlocked.
VDD, VDDQ and VPP are independent power sup-
plies and can be biased in any order.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the VDD rails decoupled with a 0.1F capac-
itor close to the VDD, VDDQ and VSS pins. The PCB
trace widths should be sufficient to carry the re-
quired VDD program and erase currents.
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| M58MR064D | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59DR032A | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064C100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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