- 您現(xiàn)在的位置：買賣IC網 > PDF目錄359082 > M58LW064C110ZA6T (意法半導體) 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58LW064C110ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁數(shù)： | 34/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110ZA6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
M58LW064A, M58LW064B
34/53
Figure 14. Synchronous Burst Read - Continuous - Valid Data Ready Output
Valid Data Ready = Valid Low during valid clock edge (M8 = 0)
Figure 15. Synchronous Burst Pipeline Read (8.1.1.1 example)
X-Latency = 8 (M14-M11 = 0010), Y-Latency = 1 (M9 = 0), Burst Length = 1 (M2-M0 = 100),
Burst Type = Any (M7 = 0 or 1), Valid Clock Edge = Rising (M6 = 1)
AI03696
K
(1)
V = Valid output; NV = Not Valid
output.
(2)
R is an open drain outputwith an internal pull up resistor of 1M
.
The internal timing of R follows DQ. An external resistor, typically 300k
for a single memory on the R Bus,
should
be used to give a data valid set up time required to recognize valid data is evailable on thenext valid clock edge.
Output
(1)
V
V
NV
NV
V
V
tBLKH
R
V
(2)
AI03695
Valid
Clock
Edges
Outputs
Addresses
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Q0 Q1 Q2 Q3
Q0 Q1 Q2 Q3
Not Valid
8
8
2nd
Address
Latch
1st
Address
Latch
相關PDF資料 |
PDF描述 |
|---|---|
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 制造商:Micron Technology Inc 功能描述: |
| M58LW064D110N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。