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參數(shù)資料
| 型號(hào)： | M58LW064C110ZA6T |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 28/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110ZA6T |
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M58LW064A, M58LW064B
28/53
Table 22. DC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. Biasing RP pin to V
HH
is allowed for a maximum cumulative period of 80 hours.
3. Current increases to I
CC
+ I
CC5
during a read operation.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±
5
μ
A
I
CC
Supply Current (Random Read)
E = V
IL
, G = V
IH
, f
add
= 6MHz
30
mA
I
CCB
Supply Current (Burst Read)
E = V
IL
, G = V
IH
, f
clock
= 50MHz
50
mA
I
CC1
Supply Current (Standby)
E = V
DD
±
0.2V,
RP = V
DD
±
0.2V
40
mA
Supply Current (Auto Low-Power)
2
mA
I
CC2
Supply Current (Reset/Power-down)
RP = V
SS
±
0.2V
1
μ
A
I
CC3(1)
Supply Current (Program or Erase,
Set Lock Bit, Erase Lock Bit)
Write to Buffer and program
Block Erase in progress
30
mA
I
CC4
Supply Current
(Erase/Program Suspend)
E = V
IH
40
μ
A
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 100
μ
A
0.1
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
DDQ
–0.1
V
V
HH(2)
RP Hardware Block Unlock Voltage
Block Erase in progress,
Write to Bufferand Program
8.5
9.5
V
V
LKO
V
DD
Supply Voltage (Erase and
Program lockout)
2.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 制造商:Micron Technology Inc 功能描述: |
| M58LW064D110N1E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
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