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參數(shù)資料
| 型號(hào)： | M58LW064C110ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁數(shù)： | 30/53頁 |
| 文件大小： | 319K |
| 代理商： | M58LW064C110ZA6T |
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M58LW064A, M58LW064B
30/53
Table 24. Asynchronous Latch Enable Controlled Read and Page Read
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V, V
DD
= 1.8V to V
DD
)
Symbol
Parameter
Test Condition
Min
Max
Unit
t
AVLL
Address Valid to Lacth Enable Low
E = V
IL
10
ns
t
AVQV1
Address Valid to Output Valid (Page Read)
E = V
IL
, G = V
IL
25
ns
t
AXQX
Address Transition to Output Transition (Page Read)
E = V
IL
, G = V
IL
6
ns
t
EHLX
Chip Enable High to Latch Enable Transition
0
ns
t
EHQX
Chip Enable High to Output Transition
G = V
IL
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
10
ns
t
ELLL
Chip ENable Low to Latch Enable Low
10
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
10
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
50
ns
t
GLQX
Output Enable Low to Output Transition
E = V
IL
0
ns
t
LHAX
Latch Enable High to Address Transition
E = V
IL
10
ns
t
LHLL
Lacth Enable High to Latch Enable Low
10
ns
t
LLLH
Latch Enable Low to LatchEnable High
E = V
IL
10
ns
t
LLQV
Latch Enable Low to Output Valid
E = V
IL
, G = V
IL
125
ns
t
LLQV1
Lacth Enable Low to Output Valid (Page Read)
E = V
IL
, G = V
IL
25
ns
t
LLQX
Latch Enable Low to Output Transition
E = V
IL
, G = V
IL
0
ns
Figure10.Asynchronous Read LatchEnable ControlledRead AC Waveforms (x16, x32 organisation)
Asynchronous Read (M15 = 1), Latch Enable Controlled (M3 = 1)
AI03251
L
E
G
A1-A22
(1)
DQ0-DQX
(2)
VALID
tEHLX
tLHLL
tLHAX
tAVLL
tELLL
tLLLH
tEHQX
tEHQZ
tGHQX
GHQZ
tLLQV
tLLQX
tGLQX
tGLQV
See also Page Read
(1)
A1 is notused (Don’t Care) in x32
organization
(2)
DQ0-DQ15 in x16 or DQ0-DQ31 in x32 organization
OUTPUT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 制造商:Micron Technology Inc 功能描述: |
| M58LW064D110N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
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